parameter symbol typ unit STN1A60 stn1a80 repetitive peak off-state voltages v drm v rrm 600 800 v rms on-state current i t(rms) 1.0 a non-repetitive peak on-state current i tsm 10 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c STN1A60/80 general description parameter symbol test conditions min typ max unit STN1A60 stn1a80 repetitive peak off-state voltage s v drm v rrm 600 800 v rms on-state current i t(rms) all conduction angles 1.0 a on-state voltage v t i t =1.5 a 1.60 v holding current i h v d =12 v; i gt =10 ma 5 ma gate trigger current t2+g+ i gt v d =6.0 v; r l = 10 5.0 ma t2+g- 5.0 t2-g- 5.0 t2-g+ 12 gate trigger voltage v gt v d =6.0 v; r l = 10 0.5 1.8 v silicon bidirectional triode thyristors designed for use in solid state relays, mpu interface, ttl logic and any other light industrial or consumer application. supplied in an inexpensive to - 92 package which is readily adaptable for use in automatic insertion equipment. product specification to-92 absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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